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庄惠照,李保理,王德晓,申加兵,张士英,薛成山.氨化Ga2O3 /Nb膜制备的GaN纳米线的光学和微观结构特性的研究[J].稀有金属材料与工程(英文),2009,38(4):565~569.[Zhuang Huizhao,Li Baoli,Wang Dexiao,Shen Jiabing,Zhang Shiying,Xue Chengshan.Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3 /Nb Films[J].Rare Metal Materials and Engineering,2009,38(4):565~569.]
Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3 /Nb Films
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Received:April 10, 2008  Revised:June 07, 2008
Key words: nanowires  ammoniating  GaN
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Author NameAffiliation
Zhuang Huizhao Institute of Semiconductors, Shandong Normal University, Ji’nan 250014, China 
Li Baoli  
Wang Dexiao  
Shen Jiabing  
Zhang Shiying  
Xue Chengshan  
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      Single-crystalline GaN nanowires have been synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900 °C in a quartz tube. The as-prepared nanowires are confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) shows that the GaN nanowires are straight and smooth, and possess the diameters of about 50 nm and lengths up to several microns. When excited by 325 nm helium-cadmium (He-Cd) laser light at room temperature, the GaN nanowires only have a strong ultraviolet luminescence peak located at 367 nm, owing to GaN band-edge emission. Finally, the growth mechanism of GaN nanowires is discussed briefly.