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程新红,何大伟,宋朝瑞,俞跃辉,沈达身.具有Al2O3阻挡层的HfO2栅介质膜的界面和电学性能的表征[J].稀有金属材料与工程(英文),2009,38(2):189~192.[Cheng Xinhong,He Dawei,Song Zhaorui,Yu Yuehui,Shen Dashen.Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3[J].Rare Metal Materials and Engineering,2009,38(2):189~192.]
Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3
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Received:January 27, 2008  
DOI:
Key words: gate dielectrics  HfO2  blocking layer  Al2O3
Foundation item:
Author NameAffiliation
Cheng Xinhong University of Wenzhou, Wenzhou 325027, China 
He Dawei Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
Song Zhaorui Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai 200051, China 
Yu Yuehui Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai 200052, China 
Shen Dashen University of Alabama in Huntsville,Huntsville, Alabama 35899 
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Abstract:
      HfO2 gate dielectric films with a blocking layer of Al2O3 inserted between HfO2 layer and Si layer (HfO2/Si) were treated with rapid thermal annealing process at 700 ℃. The interfacial structure and electrical properties were reported. The results of X-ray photoelectron spectroscopy showed that the interfacial layer of SiOx transformed into SiO2 after the annealing treatment, and Hf-silicates and Hf-silicides were not detected. The results of high-resolution transmission electron microscopy indicated that the interfacial layer was composed of SiO2 for the annealed film with blocking layer. The results of the electrical measurements indicated that the equivalent oxide thickness decreased to 2.5 nm and the fixed charge density decreased to –4.5×1011/cm2 in comparison with the same thickness of HfO2 films without the blocking layer. Al2O3 layer could effectively prevent the diffusion of Si into HfO2 film and improve the interfacial and electrical performance of HfO2 film